The 1.55 µm pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO2/TiO2) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10–40°C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.
Inspec keywords: nitrogen compounds; molecular beam epitaxial growth; optical pumping; photoluminescence; surface emitting lasers; III-V semiconductors; indium compounds; dielectric materials; laser beam applications; gallium arsenide
Other keywords:
Subjects: Lasing action in semiconductors; Photoluminescence (condensed matter); Design of specific laser systems; Metrological applications of lasers; Metrological applications of lasers; Semiconductor lasers; Dielectric materials and devices; Vacuum deposition
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