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Photoluminescence and electroabsorption in GaNAs/GaAsSb heterojunctions

Photoluminescence and electroabsorption in GaNAs/GaAsSb heterojunctions

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The measurement of photoluminescence (PL) and electroabsorption spectra in strain compensated GaNAs/GaAsSb type-II quantum wells grown on GaAs substrates using molecular beam epitaxy is reported. The bilayer quantum well (GaN0.02As0.98/GaAs0.8Sb0.2) shows a room temperature PL peak at 1300 nm, and a blue shift of the Franz-Keldysh type oscillation is observed in the multiple quantum wells consisting of GaN0.03As0.97 and GaAs0.84Sb0.16.

Inspec keywords: gallium compounds; semiconductor heterojunctions; III-V semiconductors; electroabsorption; photoluminescence; gallium arsenide; semiconductor quantum wells; semiconductor epitaxial layers

Other keywords: Franz-Keldysh type oscillation; strain compensated type-11 quantum wells; molecular beam epitaxy; GaN0.03As0.97; blue shift; heterojunctions; GaNAs-GaAsSb; bilayer quantum well; 1300 nm; GaN0.02As0.98/GaAs0.8Sb0.2; photoluminescence; GaAs0.84Sb0.16; electroabsorption; GaAs substrates

Subjects: Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Semiconductor superlattices, quantum wells and related structures; Luminescent materials; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Photoluminescence in II-VI and III-V semiconductors; Electro-optical effects (condensed matter); II-VI and III-V semiconductors

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http://iet.metastore.ingenta.com/content/journals/10.1049/el_20063572
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