In0.53Ga0.47As/InAs0.3P0.7 composite channel high electron mobility transistors

In0.53Ga0.47As/InAs0.3P0.7 composite channel high electron mobility transistors

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An In0.53Ga0.47As/InAs0.3P0.7 composite channel high electron mobility transistor (HEMT) structure was grown by molecular beam epitaxy. Room-temperature Hall measurement showed that the device wafer had an electron mobility of 7300 cm2/V s and a sheet electron density of 3×1012 cm−2. The fabricated HEMT devices with a gate length of 0.25 µm exhibited excellent DC and microwave performance with a peak extrinsic transconductance of 888.3 mS/mm, a cutoff frequency (fT) of 115 GHz, and a maximum frequency of oscillation of 137 GHz. This is believed to be the first report of InGaAs/InAsP composite channel HEMTs. The fT is the highest ever reported for any composite channel HEMTs with the same gate length.


    1. 1)
      • Enoki, T., Arai, K., Kohzen, A., Ishii, Y.: `InGaAs/InP double channel HEMT on InP', Proc. 4th IPRM Conf., 1992, p. 14–17.
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      • G. Meneghesso , A. Neviani , R. Oesterholt , M. Matloubian , T. Liu , T. Brown , C. Canali , E. Zanoni . On-state and off-state breakdown in GaInAs/InP composite-channel HEMTs with variable GaInAs channel thickness. IEEE Trans. Electron Devices , 1 , 2 - 9
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