The aim of the work reported is to establish new design restrictions for thin-film silicon-on-insulator (TF-SOI) power MOSFETs using an analytical closed form expression to obtain the electric field at the gate edge. When the gate oxide is extended above the drift region, this field becomes stronger, thus degrading device performance and reliability.
References
-
-
1)
-
G.A.M. Hurkx ,
D.B.M. Klaasen ,
M.P.G. Knuvers
.
A new recombination model for device simulation including tunneling.
IEEE Trans. Electron Devices
,
331 -
338
-
2)
-
M.A. Imam ,
M.A. Osman ,
A.A. Osman
.
Threshold voltage model for deep-submicron fully-depleted SOI MOSFETs with back gate substrate induced surface potential effects.
Microelectron. Reliab.
,
4 ,
487 -
495
-
3)
-
M. Bawedin ,
C. Renaux ,
D. Flandre
.
LDMOS in SOI technologywith very-thin silicon film.
Solid-State Electron.
,
12 ,
2263 -
2270
-
4)
-
S.K. Chung ,
S.-Y. Han
.
Analytical model for the surface field distribution of SOI RESURF devices.
IEEE Trans. Electron Devices
,
6 ,
1374 -
1376
-
5)
-
A. Vandoreen ,
J.F. Conley ,
S. Cristoloveanu ,
M. Mojarradi ,
E. Kolawa
.
Degradation mechanisms in SOI n-channel LDMOSFETs.
Microelectron. Eng.
,
489 -
495
-
6)
-
W. Yang ,
X. Cheng ,
Y. Yu ,
Z. Song ,
D. Shen
.
A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs.
Solid-State Electron.
,
1 ,
43 -
48
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20063220
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content/journals/10.1049/el_20063220
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