Low-power InP/GaAsSb/InP DHBT cascode transimpedance amplifier with GBP/Pdc of 7.2 GHz/mW

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Low-power InP/GaAsSb/InP DHBT cascode transimpedance amplifier with GBP/Pdc of 7.2 GHz/mW

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A low-power high gain-bandwidth monolithic cascode transimpedance amplifier using novel InP/GaAsSb/InP DHBT technology was investigated. The amplifier exhibited state-of-the-art performance of 17.3 dB gain, 12 GHz bandwidth, 55 dBΩ transimpedance, and a corresponding gain-bandwidth of 6.7 THzΩ while consuming only 12.2 mW DC power. It also achieved good gain-bandwidth-product per DC power figure-of-merit (GBP/Pdc) of 7.2 GHz/mW.

Inspec keywords: bipolar MIMIC; indium compounds; gallium arsenide; heterojunction bipolar transistors; MMIC amplifiers; low-power electronics; III-V semiconductors

Other keywords: low power DHBT; 12.2 mW; gain-bandwidth-product per DC power figure-of-merit; monolithic cascode transimpedance amplifier; 17.3 dB; InP-GaAsSb-InP; double heterojunction bipolar transistor; 12 GHz

Subjects: Bipolar integrated circuits; Amplifiers; Microwave integrated circuits

References

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    2. 2)
      • Park, J., Mohammadi, S., Pavlidis, D., Dua, C., Guyaux, J., Garcia, J.: `GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics', IEEE MTT-S Int. Microwave Symp. Dig., June 1998, Baltimore, MD, USA, p. 39–42.
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      • Zhu, X., Pavlidis, D., Zhao, G.Y., Han, B.K., Wibowo, A., Pan, N.: `First power demonstration of InP/GaAsSb/InP double HBTs', Proc. 16th Int. Conf. on Indium Phosphide and Related Materials, June 2004, Kagoshima, Japan, p. 757–760.
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      • Suzuki, H., Watanabe, K., Ishikawa, K., Masuda, H., Ouchi, K., Tanoue, T., Takeyari, R.: `InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems', Proc. IEEE-CAS Region 8 Workshop on Analog and Mixed IC Design, September 1997, Baveno, Italy, p. 215–218.
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      • Zhu, X., Wang, J., Pavlidis, D., Hsu, S.: `First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs', IEEE MTT-S Int. Microwave Symp. Dig., June 2005, Long Beach, CA, USA.
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      • Boglione, L.: `Power and linearity performance of a cascode InGaP/GaAs HBT distributed amplifier for instrument applications', IEEE MTT-S Int. Microwave Symp. Dig., June 2003, Philadelphia, PA, USA, p. 2217–2220.
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