Fully-integrated GaAs HBT power amplifier MMIC with high linear output power for 3 GHz-band broadband wireless applications

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Fully-integrated GaAs HBT power amplifier MMIC with high linear output power for 3 GHz-band broadband wireless applications

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A high linear output power two-stage GaAs heterojunction bipolar transistor (HBT) power amplifier MMIC is reported. The input, interstage and output matching circuits are designed for wideband and low-voltage operations, and are fully integrated into an MMIC chip. The power amplifier measured with 54 Mbits 64-QAM OFDM signals at a collector supply voltage of 3.3 V showed linear output power of higher than 23.2 dBm at an error vector magnitude of 3.0% in a frequency range 3.3–3.6 GHz.

Inspec keywords: gallium arsenide; III-V semiconductors; bipolar MMIC; MMIC power amplifiers

Other keywords: 3.3 to 3.6 GHz; broadband wireless application; MMIC power amplifier; heterojunction bipolar transistor; HBT power amplifier; 54E6 bit; MMIC chip; GaAs; QAM OFDM signals; 3.3 V; matching circuits

Subjects: Amplifiers; Microwave integrated circuits; Bipolar integrated circuits

References

    1. 1)
      • Koh, H., Sakuno, K., Kawamura, H., Amano, Y., Hasegawa, M., Kagoshima, K., Shirakawa, K., Takahashi, N., Liu, Y., Oka, T., Fujita, K., Yamashita, M., Matsumoto, N., Sato, H.: `A high efficiency InGaP/GaAs HBT power amplifier MMIC for the 5 GHz wireless-LAN application', Proc. 32nd European Microwave Conf., September 2002, p. 469–472.
    2. 2)
      • Green, D.: `RF front-end component requirements for WiMAX applications', The Key Conference, 2 November 2005.
    3. 3)
      • Kawamura, H., Sakuno, K., Hasegawa, T., Hasegawa, M., Koh, H., Sato, H.: `A miniature 44% efficiency GaAs HBT power amplifier MMIC for the W-CDMA application', IEEE GaAs IC Symp. Tech. Dig., 2000, p. 25–28.
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