1.2 V NOR Flash memory in system-in-package

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1.2 V NOR Flash memory in system-in-package

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© The Institution of Engineering and Technology
Published

A NOR Flash memory system, the supply voltage of which can be as low as 1.2 V, is described. The internal memory chip supply voltage (1.8 V) is obtained by means of a DC-DC converter totally included in the same package of the memory. This system represents a way to overcome technology limitations to generate a Flash device supplied at a voltage close to 1 V and below. The NOR Flash memory system is assembled in a ball grid array 88 balls 14×8×1.6 mm, with the same ballout of the standard Flash memory working at 1.8 V.

Inspec keywords: flash memories; DC-DC power convertors; system-in-package; NOR circuits; ball grid arrays

Other keywords: NOR flash memory; system-in-package; 8 mm; 1 V; DC-DC converter; ball grid array; internal memory chip; 1.8 V; flash device; 14 mm; 1.2 V; 1.6 mm

Subjects: Power electronics, supply and supervisory circuits; Product packaging; Memory circuits; Logic and switching circuits; Semiconductor storage; Logic circuits

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      • W.D. Brown . (1999) Advanced electronic packaging.
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