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Nitrogen-doped ZnO thin films were deposited using the pulsed laser deposition technique. The epitaxial ZnO films were p-type in the measured temperature range 200–450 K, with hole concentrations and mobilities of 9.6×1015 cm−3 and 10.8 cm2/V-s, respectively, at room temperature. The films remained p-type under conditions of changing illumination. This result represents a step towards realisation of ZnO-based optoelectronic devices for high-temperature operation.
References
-
-
1)
-
D.J. Rogers
.
Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode.
Appl. Phys. Lett.
-
2)
-
A. Tsukazaki ,
A. Ohtomo ,
T. Onuma ,
M. Ohtani ,
T. Makino ,
M. Sumiya ,
K. Ohtani ,
S.F. Chichibu ,
S. Fuke ,
Y. Segawa ,
H. Ohno ,
H. Koinuma ,
M. Kawasaki
.
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO.
Nature Mater.
,
42 -
46
-
3)
-
E.C. Lee
.
Compensation mechanism in N acceptors in ZnO.
Phys. Rev. B
-
4)
-
A. Kobayashi ,
O.F. Sankey ,
J.D. Dow
.
Deep energy levels of defects in the wurtzite semiconductors AlN, CdS, CdSe, ZnS, and ZnO.
Phys. Rev. B
-
5)
-
C.H. Park ,
S.B. Zhang ,
S.H. Wei
.
Origin of p-type doping difficulty in ZnO: the impurity perspective.
Phys. Rev. B
-
6)
-
Y.G. Wang
.
Observations of nitrogen-related photoluminescence bands from nitrogen-doped ZnO films.
J. Cryst. Growth
-
7)
-
B. Claflin
.
Persistent n-type photoconductivity in p-type ZnO.
J. Cryst. Growth
-
8)
-
P. Fons
.
Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO.
Phys. Rev. Lett.
-
9)
-
D.C. Look
.
Electrical and optical properties of p-type ZnO.
Semicond. Sci. Technol.
,
S55 -
S61
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