p-type conduction above room temperature in nitrogen-doped ZnO thin film grown by plasma-assisted pulsed laser deposition
Nitrogen-doped ZnO thin films were deposited using the pulsed laser deposition technique. The epitaxial ZnO films were p-type in the measured temperature range 200–450 K, with hole concentrations and mobilities of 9.6×1015 cm−3 and 10.8 cm2/V-s, respectively, at room temperature. The films remained p-type under conditions of changing illumination. This result represents a step towards realisation of ZnO-based optoelectronic devices for high-temperature operation.
