Cascaded silicon Raman lasers as mid-infrared sources

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Cascaded silicon Raman lasers as mid-infrared sources

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It is shown by numerical simulations that cascaded silicon Raman lasers, in which the pump light undergoes multiple Stokes shifts in a silicon waveguide, can efficiently convert near-IR to mid-IR radiation. For pump wavelengths significantly below 2 µm, two-photon-absorption-induced free-carrier absorption degrades conversion efficiency, and the effective carrier lifetime determines the shortest possible pump wavelength.

Inspec keywords: Raman lasers; spectroscopic light sources; silicon; infrared sources; optical pumping; solid lasers; waveguide lasers; numerical analysis

Other keywords: numerical simulations; Si; cascaded silicon Raman lasers; pump light; photon-absorption-induced free-carrier absorption; pump wavelengths; carrier lifetime; silicon waveguide; conversion efficiency; infrared radiation; Stokes shifts

Subjects: Design of specific laser systems; Solid lasers; Other numerical methods; Numerical approximation and analysis; Lasing action in other solids

References

    1. 1)
      • Jalali, B., Boyraz, O., Dimitropoulos, D., Raghunathan, V., Claps, R., Koonath, P.: `Silicon Raman amplifiers, lasers, and their applications', ThA1, Conf. on Group IV Photonics (GFP), 2005.
    2. 2)
    3. 3)
      • M. Krause , H. Renner , E. Brinkmeyer . Analysis of Raman lasing characteristics in silicon-on-insulator waveguides. Opt. Express , 23 , 5703 - 5710
    4. 4)
    5. 5)
      • R.L. Espinola , J.I. Dadap , J. Richard , M. Osgood , S.J. McNab , Y.A. Vlasov . Raman amplification in ultrasmall silicon-on-insulator wire waveguides. Opt. Express , 16 , 3713 - 3718
    6. 6)
      • I.T. Sorokina , K.L. Vodopyanov . (2003) Solid-state mid-infrared laser sources, ser. Topics in Applied Physics.
    7. 7)
      • R. Claps , D. Dimitropoulos , V. Raghunathan , Y. Han , B. Jalali . Observation of stimulated Raman amplification in silicon waveguides. Opt. Express , 15 , 1731 - 1739
    8. 8)
      • R. Claps , V. Raghunathan , D. Dimitropoulos , B. Jalali . Influence of nonlinear absorption on Raman amplification in silicon waveguides. Opt. Express , 12 , 2774 - 2780
    9. 9)
      • M. Grimsditch , M. Cardona . Absolute cross-section for Raman scattering by phonons in silicon. Phys. Status Solidi B , 155 - 161
    10. 10)
      • C. Headley , J.-C. Bouteiller , M. Mermelstein , K. Brar , C. Horn . Raman fiber lasers as pumps for Raman amplification. Active and Passive Optical Components for WDM Communications II, Proc. SPIE , 191 - 205
    11. 11)
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