UV-LED controlled GaN-based SAW phase shifter

Author(s): D. Ciplys ; M.S. Shur ; R. Rimeika ; J. Sinius ; R. Gaska ; Yu. Bilenko ; Q. Fareed
DOI: 10.1049/el:20062028

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Author(s): D. Ciplys ¹ ; M.S. Shur ¹ ; R. Rimeika ² ; J. Sinius ¹ ; R. Gaska ³ ; Yu. Bilenko ³ ; Q. Fareed ³
- Affiliations: 1: Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, USA
  2: Department of Radiophysics, Vilnius University, Vilnius, Lithuania
  3: Department of Radiophysics, Sensor Electronic Technology, Inc., Columbia, USA
Source: Volume 42, Issue 21, 12 October 2006, p. 1254 – 1255
DOI: 10.1049/el:20062028 , Print ISSN 0013-5194, Online ISSN 1350-911X

The UV-LED controlled phase shifter of an RF signal based on a GaN-sapphire surface-acoustic-wave (SAW) filter has been implemented. At the optical wavelength 298 nm and SAW frequency 307 MHz, the UV-induced relative change in SAW velocity per unit optical power density is 2×10⁻⁶ (µW/mm²)⁻¹ corresponding to 3.7° phase shift. The phase modulation of an RF signal by rectangular UV pulses has been demonstrated. The efficiency of the phase shifter can be considerably improved by proper selection of sheet-resistivity of the GaN layer.

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UV-LED controlled GaN-based SAW phase shifter

UV-LED controlled GaN-based SAW phase shifter

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