Inertial-grade in-plane resonant silicon accelerometer

Access Full Text

Inertial-grade in-plane resonant silicon accelerometer

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Engineering and Technology
Published

A micro-G detectable in-plane vibrating accelerometer is implemented by using a single crystalline silicon and glass-silicon anodic-bonded vacuum packaging technique. The sensing principle of the accelerometer is a gap-sensitive electrostatic stiffness changing effect. A mixed surface-bulk micromachining technology has been developed to use 40 µm-thick silicon as a structure material. The fabricated accelerometer shows a resolution of 5.2 µG and 128 Hz/G at the nominal frequency of 23.4 kHz.

Inspec keywords: electronics packaging; accelerometers; vacuum techniques; microsensors; micromachining

Other keywords: mixed surface-bulk micromachining; crystalline silicon; vibrating accelerometer; 23.4 kHz; resonant silicon accelerometer; 40 micron; gap-sensitive electrostatic stiffness changing effect; glass-silicon anodic-bonded vacuum packaging

Subjects: Velocity, acceleration and rotation measurement; Product packaging; Microsensors and nanosensors; Velocity, acceleration and rotation measurement; Micromechanical and nanomechanical devices and systems; Sensing and detecting devices; Fabrication of MEMS and NEMS devices

References

    1. 1)
    2. 2)
    3. 3)
      • Burns, D.W., Horning, R.D., Herb, W.R., Zook, J.D., Guckel, H.: `Resonant microbeam accelerometer', 8thInt. Conf. on Solid-State Sensors and Actuators, and Eurosensors IX (Transducers'95), Stockholm, Sweden, p. 659–662.
    4. 4)
      • Han, K.H., Cho, Y.H.: `Self-balanced high-resolution capacitive microaccelerometers using branched finger electrodes with high-amplitude sense voltage', IEEE 5th Annual Int. Conf. on Micro Electro Mechanical Systems (MEMS'02), January 2002, Las Vegas, NV, USA, p. 714–717.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20061774
Loading

Related content

content/journals/10.1049/el_20061774
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading