© The Institution of Engineering and Technology
A micro-G detectable in-plane vibrating accelerometer is implemented by using a single crystalline silicon and glass-silicon anodic-bonded vacuum packaging technique. The sensing principle of the accelerometer is a gap-sensitive electrostatic stiffness changing effect. A mixed surface-bulk micromachining technology has been developed to use 40 µm-thick silicon as a structure material. The fabricated accelerometer shows a resolution of 5.2 µG and 128 Hz/G at the nominal frequency of 23.4 kHz.
References
-
-
1)
-
B. Lee ,
S. Seok ,
K. Chun
.
A study on wafer level vacuum packaging for MEMS devices.
J. Micromech. Microeng.
,
5 ,
663 -
669
-
2)
-
A. Partridge ,
J.K. Reynolds ,
B.W. Chui ,
E.W. Chow ,
A.M. Fitzgerald ,
L. Zhang ,
N.I. Maluf ,
T.W. Kenny
.
A high-performance planar piezoresistive accelerometer.
J. Microelectromech. Syst.
,
1 ,
58 -
66
-
3)
-
Burns, D.W., Horning, R.D., Herb, W.R., Zook, J.D., Guckel, H.: `Resonant microbeam accelerometer', 8thInt. Conf. on Solid-State Sensors and Actuators, and Eurosensors IX (Transducers'95), Stockholm, Sweden, p. 659–662.
-
4)
-
Han, K.H., Cho, Y.H.: `Self-balanced high-resolution capacitive microaccelerometers using branched finger electrodes with high-amplitude sense voltage', IEEE 5th Annual Int. Conf. on Micro Electro Mechanical Systems (MEMS'02), January 2002, Las Vegas, NV, USA, p. 714–717.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20061774
Related content
content/journals/10.1049/el_20061774
pub_keyword,iet_inspecKeyword,pub_concept
6
6