Inertial-grade in-plane resonant silicon accelerometer
A micro-G detectable in-plane vibrating accelerometer is implemented by using a single crystalline silicon and glass-silicon anodic-bonded vacuum packaging technique. The sensing principle of the accelerometer is a gap-sensitive electrostatic stiffness changing effect. A mixed surface-bulk micromachining technology has been developed to use 40 µm-thick silicon as a structure material. The fabricated accelerometer shows a resolution of 5.2 µG and 128 Hz/G at the nominal frequency of 23.4 kHz.