Inertial-grade in-plane resonant silicon accelerometer

Inertial-grade in-plane resonant silicon accelerometer

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A micro-G detectable in-plane vibrating accelerometer is implemented by using a single crystalline silicon and glass-silicon anodic-bonded vacuum packaging technique. The sensing principle of the accelerometer is a gap-sensitive electrostatic stiffness changing effect. A mixed surface-bulk micromachining technology has been developed to use 40 µm-thick silicon as a structure material. The fabricated accelerometer shows a resolution of 5.2 µG and 128 Hz/G at the nominal frequency of 23.4 kHz.


    1. 1)
    2. 2)
      • Han, K.H., Cho, Y.H.: `Self-balanced high-resolution capacitive microaccelerometers using branched finger electrodes with high-amplitude sense voltage', IEEE 5th Annual Int. Conf. on Micro Electro Mechanical Systems (MEMS'02), January 2002, Las Vegas, NV, USA, p. 714–717.
    3. 3)
      • Burns, D.W., Horning, R.D., Herb, W.R., Zook, J.D., Guckel, H.: `Resonant microbeam accelerometer', 8thInt. Conf. on Solid-State Sensors and Actuators, and Eurosensors IX (Transducers'95), Stockholm, Sweden, p. 659–662.
    4. 4)

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