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The fabrication and characterisation of a monolithic extended cavity ridge laser using low-energy ion-implantation induced quantum well intermixing on InGaAs/InGaAsP quantum-well structure are presented. An extremely low propagation loss of 2 cm−1 in the passive waveguide section has been measured.
Inspec keywords: gallium arsenide; III-V semiconductors; ion implantation; indium compounds; quantum well lasers; laser cavity resonators; arsenic compounds; waveguide lasers
Other keywords:
Subjects: Lasing action in semiconductors; Doping and implantation of impurities; Semiconductor lasers; Laser resonators and cavities; Laser resonators and cavities; Semiconductor doping