LED array integrated with Si driving circuits for LED printer printhead

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LED array integrated with Si driving circuits for LED printer printhead

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© The Institution of Engineering and Technology
Published

A 600 dots per inch LED array chip integrated with Si drivers using a three-dimensional epitaxial thin-film bonding has been developed. Performance tests showed high emitted light power (47 µW at an LED current of 1 mA) with smaller variations (±7%), and long lifetime. Test results provide good enough characteristics to use the LED array chip in a high-printing-speed LED printer printhead.

Inspec keywords: microprocessor chips; LED printers; light emitting diodes; driver circuits; arrays

Other keywords: emitted light power; 47 muW; 1 mA; LED array chip; three-dimensional epitaxial thin-film bonding; LED printer printhead; Si driving circuits

Subjects: Light emitting diodes; Power electronics, supply and supervisory circuits; Microprocessors and microcomputers

References

    1. 1)
      • E. Yablonovitch , T. Gmitter , J.P. Harbison , R. Bhat . Extreme selectivity in the lift-off of epitaxial GaAs films. Appl. Phys. Lett. , 26 , 2222 - 2224
    2. 2)
      • C. Camperi-Ginestet , Y.W. Kim , N.M. Jokerst , M.G. Allen , M.A. Brooke . Vertical electrical interconnection of compound semiconductor thin-film devices to underlying silicon circuitry. IEEE Photonics Technol. Lett. , 9 , 1103 - 1106
    3. 3)
      • D.L. Mathine . The integration of III-V optoelectronics with silicon circuitry. IEEE J. Sel. Top. Quantum Electron. , 3 , 952 - 959
    4. 4)
      • Taninaka, M., Koizumi, M., Nobori, M., Tohyama, H., Ogihara, M., Nakamura, Y.: `High-speed high-resolution 1200 dpi LED print head', Proc. IS&T's NIP17: Int. Conf. on Digital Print Technologies, 2001, Florida, USA, p. 696–700.
    5. 5)
      • N.M. Jokerst , M.A. Brooke , J. Laskar , D.S. Wills , A.S. Brown , M. Vrazel , S. Jung , Y. Joo , J.J. Chang . Microsystem optoelectronic integration for mixed multisignal systems. IEEE J. Sel. Top. Quantum Electron. , 6 , 1231 - 1239
    6. 6)
      • A. Ersen , I. Schnitzer , E. Yablonovitch , T. Gmitter . Direct bonding of GaAs films on silicon circuits by epitaxial liftoff. Solid-State Electron. , 12 , 1731 - 1739
    7. 7)
      • M. Konagai , M. Sugimoto , K. Takahashi . High efficiency GaAs thin film solar cells by peeled film technology. J. Cryst. Growth , 277 - 280
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