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Stable passivation technique for high-temperature polycrystalline silicon on insulator MOSFETs for MEMS integration

Stable passivation technique for high-temperature polycrystalline silicon on insulator MOSFETs for MEMS integration

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© The Institution of Engineering and Technology
Published

A passivation technique is reported based on selective doping of the polycrystalline silicon grain boundaries with phosphorus. The polycrystalline silicon on insulator (PSOI) MOSFETs fabricated on films passivated by this method show considerable improvement in the overall performance compared with unpassivated devices. This technique is compatible with high-temperature micro-electromechanical systems (MEMS) processes and hence can be used to integrate PSOI MOSFETs with MEMS structures and devices.

Inspec keywords: phosphorus; grain boundaries; MOSFET; silicon; silicon-on-insulator; micromechanical devices; elemental semiconductors; semiconductor doping; passivation

Other keywords: passivation technique; microelectromechanical systems; PSOI MOSFET; grain boundaries; high-temperature polycrystalline silicon on insulator; Si:P; MEMS integration

Subjects: Semiconductor doping; Fabrication of MEMS and NEMS devices; Insulated gate field effect transistors; Surface treatment (semiconductor technology)

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