© The Institution of Engineering and Technology
Light emission profiles from AlGaInP LEDs are compared with those obtained via Monte-Carlo simulation and a lossy transmission line model. Results show good agreement for devices with thin current spreading layers. However, for thicker layers, geometric effects dominate the output profile, resulting in discrepancies between experimental data and the transmission line model. The simulation of emission profiles confirms this discrepancy, caused by light escaping from below the p-contact.
References
-
-
1)
-
F. Hu ,
K.-Y. Qian ,
Y. Luo
.
Far-field pattern simulation of flip-chip bonded power light-emitting diodes by a Monte Carlo photon-tracing method.
Appl. Opt.
,
14 ,
2768 -
2771
-
2)
-
S.J. Lee
.
Analysis of light-emitting diodes by Monte Carlo photon simulation.
Appl. Opt.
,
9 ,
1427 -
1437
-
3)
-
A. Porch ,
D.V. Morgan ,
R.M. Perks ,
M.O. Jones ,
P.P. Edwards
.
Transparent current spreading layers for optoelectronic devices.
J. Appl. Phys.
,
8 ,
4211 -
4218
-
4)
-
Y.H. Aliyu ,
D.V. Morgan ,
H. Thomas ,
S.W. Bland
.
A1GaInP LEDs using reactive thermally evaporated transparent conducting indium tin oxide (ITO).
Electron. Lett.
,
25 ,
2210 -
2212
-
5)
-
T.H. Gessmann ,
E.F. Schubert
.
High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications.
J. Appl. Phys.
,
5 ,
2203 -
2216
-
6)
-
D.V. Morgan ,
I.M. Al-Ofi ,
Y.H. Aliyu
.
Indium tin oxide spreading layers for AlGaInP visible LEDs.
Semicond. Sci. Technol.
,
62 ,
67 -
72
-
7)
-
R.M. Fletcher ,
C.P. Kuo ,
T.D. Osentowski ,
K.H. Huang ,
M.G. Craford
.
The growth and properties of high performance A1InGap emitters using lattice mismatched GaP window layers.
J. Electron. Mater.
,
12
-
8)
-
S.J. Lee ,
A. Badano ,
J. Kanicki
.
Monte Carlo modeling of the light transport in polymer light-emitting devices on plastic substrates.
IEEE J. Sel. Top. Quantum Electron.
,
1 ,
37 -
44
-
9)
-
A. Porch ,
D.V. Morgan ,
A. Porch ,
R.M. Perks ,
D.V. Morgan
.
(2005)
Analysis of current spreading in transparent current spreading layers of finite size 5-7, Compound semiconductor devices and integrated circuits.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20060463
Related content
content/journals/10.1049/el_20060463
pub_keyword,iet_inspecKeyword,pub_concept
6
6