An n-InAsSb/p-GaSb tunnel junction for intra-device contacts with an extremely low contact resistivity of 2.4×10−6 Ω cm2 is reported. Both sides of the junction were doped with silicon, using the amphoteric nature of the dopant for n- and p-type doping. This should provide long-term stability of the device.
Inspec keywords: gallium compounds; contact resistance; semiconductor-metal boundaries; p-n heterojunctions; silicon; semiconductor doping; III-V semiconductors; indium compounds; ohmic contacts
Other keywords: extremely low resistivity; p-type doping; intra-device contacts; device stability; n-type doping; InAsSb:Si-GaSb:Si; amphoteric dopant; tunnel junctions
Subjects: Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Semiconductor-metal interfaces; Electrical properties of metal-nonmetal contacts; Semiconductor doping; Semiconductor junctions
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