An n-InAsSb/p-GaSb tunnel junction for intra-device contacts with an extremely low contact resistivity of 2.4×10−6 Ω cm2 is reported. Both sides of the junction were doped with silicon, using the amphoteric nature of the dopant for n- and p-type doping. This should provide long-term stability of the device.
Inspec keywords: gallium compounds; contact resistance; semiconductor-metal boundaries; p-n heterojunctions; silicon; semiconductor doping; III-V semiconductors; indium compounds; ohmic contacts
Other keywords: extremely low resistivity; p-type doping; intra-device contacts; device stability; n-type doping; InAsSb:Si-GaSb:Si; amphoteric dopant; tunnel junctions
Subjects: Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Semiconductor-metal interfaces; Electrical properties of metal-nonmetal contacts; Semiconductor doping; Semiconductor junctions
References
-
-
1)
- J.S. Moon , D.H. Chow , J.N. Schulman , P. Deelman , J.J. Zinck . Experimental demonstration of split-gated resonant interband tunneling devices. Appl. Phys. Lett. , 4 , 678 - 680
-
2)
- O. Dier , M. Sterkel , M. Grau , C. Lin , C. Lauer , M.-C. Amann . Tunnel junctions for ohmic intra-device contacts on GaSb-substrates. Appl. Phys. Lett. , 12 , 2388 - 2389
-
3)
- O. Dier , M. Grau , C. Lauer , C. Lin , M.-C. Amann . Diffusion of dopants in highly (∼1020 cm−3) n- and p-doped GaSb-based materials. J. Vac. Sci. Technol. B , 2 , 349 - 353
-
4)
- C. Lauer , O. Dier , F. Fligge , M.-C. Amann . Low-resistive ohmic contacts to n-type GaSb using an n+-InAsSb contact layer. IEEE Electron Device Lett.
-
5)
- G. Franz , M.-C. Amann . Extremely low contact resistivity of Ti/Pt/Au contacts on p+-InGaAs as determined by a new evaluation method. J. Electrochem. Soc. , 3 , 847 - 850
-
6)
- P. Fay , L. Jiang , Y. Xu , G.H. Bernstein , D.H. Chow , J.N. Schulmann , H.L. Dunlap , H.J. de los Santos . Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMT and InAs/AlSb/GaSb resonant interband tunneling diodes. IEEE Trans. Electron. Devices , 6 , 1282 - 1284
-
7)
- C. Lauer , M. Ortsiefer , R. Shau , J. Rosskopf , G. Böhm , E. Rönneberg , F. Köhler , M.-C. Amann . 80°C continuous-wave operation of 2.01-µm wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers. IEEE Photonics Technol. Lett. , 10 , 2209 - 2211
-
8)
- A.R. Giehl , M. Gumbel , C. Schwender , N. Herhammer , H. Fouckhardt . Waveguide-based type-II heterostructure photodiode on InAs substrate with broad wavelength range photoresponse. IEEE Photonics Technol. Lett. , 5 , 1358 - 1360
-
9)
- D. McMorrow , R. Magno , A.S. Bracker , B.R. Bennett , S. Buchner , J.S. Melinger . Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs). IEEE Trans. Nucl. Sci. , 6 , 1973 - 1979
-
1)
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