An n-InAsSb/p-GaSb tunnel junction for intra-device contacts with an extremely low contact resistivity of 2.4×10−6 Ω cm2 is reported. Both sides of the junction were doped with silicon, using the amphoteric nature of the dopant for n- and p-type doping. This should provide long-term stability of the device.
References
-
-
1)
-
J.S. Moon ,
D.H. Chow ,
J.N. Schulman ,
P. Deelman ,
J.J. Zinck
.
Experimental demonstration of split-gated resonant interband tunneling devices.
Appl. Phys. Lett.
,
4 ,
678 -
680
-
2)
-
O. Dier ,
M. Sterkel ,
M. Grau ,
C. Lin ,
C. Lauer ,
M.-C. Amann
.
Tunnel junctions for ohmic intra-device contacts on GaSb-substrates.
Appl. Phys. Lett.
,
12 ,
2388 -
2389
-
3)
-
O. Dier ,
M. Grau ,
C. Lauer ,
C. Lin ,
M.-C. Amann
.
Diffusion of dopants in highly (∼1020 cm−3) n- and p-doped GaSb-based materials.
J. Vac. Sci. Technol. B
,
2 ,
349 -
353
-
4)
-
C. Lauer ,
O. Dier ,
F. Fligge ,
M.-C. Amann
.
Low-resistive ohmic contacts to n-type GaSb using an n+-InAsSb contact layer.
IEEE Electron Device Lett.
-
5)
-
G. Franz ,
M.-C. Amann
.
Extremely low contact resistivity of Ti/Pt/Au contacts on p+-InGaAs as determined by a new evaluation method.
J. Electrochem. Soc.
,
3 ,
847 -
850
-
6)
-
P. Fay ,
L. Jiang ,
Y. Xu ,
G.H. Bernstein ,
D.H. Chow ,
J.N. Schulmann ,
H.L. Dunlap ,
H.J. de los Santos
.
Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMT and InAs/AlSb/GaSb resonant interband tunneling diodes.
IEEE Trans. Electron. Devices
,
6 ,
1282 -
1284
-
7)
-
C. Lauer ,
M. Ortsiefer ,
R. Shau ,
J. Rosskopf ,
G. Böhm ,
E. Rönneberg ,
F. Köhler ,
M.-C. Amann
.
80°C continuous-wave operation of 2.01-µm wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers.
IEEE Photonics Technol. Lett.
,
10 ,
2209 -
2211
-
8)
-
A.R. Giehl ,
M. Gumbel ,
C. Schwender ,
N. Herhammer ,
H. Fouckhardt
.
Waveguide-based type-II heterostructure photodiode on InAs substrate with broad wavelength range photoresponse.
IEEE Photonics Technol. Lett.
,
5 ,
1358 -
1360
-
9)
-
D. McMorrow ,
R. Magno ,
A.S. Bracker ,
B.R. Bennett ,
S. Buchner ,
J.S. Melinger
.
Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs).
IEEE Trans. Nucl. Sci.
,
6 ,
1973 -
1979
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