n-InAsSb/p-GaSb tunnel junctions with extremely low resistivity
n-InAsSb/p-GaSb tunnel junctions with extremely low resistivity
- Author(s): O. Dier ; C. Lauer ; M.-C. Amann
- DOI: 10.1049/el:20060341
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- Author(s): O. Dier 1 ; C. Lauer 1 ; M.-C. Amann 1
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View affiliations
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Affiliations:
1: Walter Schottky Institut, Technische Universität München, Garching, Germany
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Affiliations:
1: Walter Schottky Institut, Technische Universität München, Garching, Germany
- Source:
Volume 42, Issue 7,
30 March 2006,
p.
419 – 420
DOI: 10.1049/el:20060341 , Print ISSN 0013-5194, Online ISSN 1350-911X
An n-InAsSb/p-GaSb tunnel junction for intra-device contacts with an extremely low contact resistivity of 2.4×10−6 Ω cm2 is reported. Both sides of the junction were doped with silicon, using the amphoteric nature of the dopant for n- and p-type doping. This should provide long-term stability of the device.
Inspec keywords: p-n heterojunctions; semiconductor-metal boundaries; indium compounds; ohmic contacts; III-V semiconductors; silicon; contact resistance; gallium compounds; semiconductor doping
Other keywords:
Subjects: Electrical properties of metal-nonmetal contacts; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Semiconductor doping; Semiconductor-metal interfaces; Semiconductor junctions
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