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n-InAsSb/p-GaSb tunnel junctions with extremely low resistivity

n-InAsSb/p-GaSb tunnel junctions with extremely low resistivity

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An n-InAsSb/p-GaSb tunnel junction for intra-device contacts with an extremely low contact resistivity of 2.4×10−6 Ω cm2 is reported. Both sides of the junction were doped with silicon, using the amphoteric nature of the dopant for n- and p-type doping. This should provide long-term stability of the device.

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