An InGaAs/InAlAs quantum wire photo-FET has been fabricated on a V-grooved (311) InP substrate by atomic hydrogen assisted molecular beam epitaxy. The room-temperature photosensitivity of the quantum wire photo-FET reached 350 kA/W near a wavelength of 700 nm at a drain-source voltage of 1 V.
Inspec keywords: indium compounds; phototransistors; aluminium compounds; semiconductor quantum wires; field effect transistors; molecular beam epitaxial growth; III-V semiconductors; gallium arsenide
Other keywords:
Subjects: Semiconductor superlattices, quantum wells and related structures; Vacuum deposition; Photoelectric devices; Other field effect devices
References
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