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InP Gunn devices for 400–425 GHz

InP Gunn devices for 400–425 GHz

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  • Author(s): H. Eisele 1
    • View affiliations
    • Affiliations: 1: Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds, United Kingdom
  • Source: Volume 42, Issue 6, 16 March 2006, p. 358 – 359
    DOI:  10.1049/el:20060218 , Print ISSN 0013-5194, Online ISSN 1350-911X
© IEE
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InP Gunn devices with two similar graded doping profiles were evaluated for third-harmonic power extraction above 400 GHz. The oscillators used the configuration of a WR-6 waveguide cavity for the InP Gunn device and a WR-2 dielectric-filled conical horn with the appropriate waveguide transition for power measurements with a quasi-optical absolute power meter. The best devices yielded output power levels of 45 µW at 409 GHz, 40 µW at 412 GHz and 40 µW at 422 GHz.

Inspec keywords: waveguide transitions; millimetre wave devices; indium compounds; doping profiles; Gunn oscillators; Gunn devices; III-V semiconductors

Other keywords: 400 to 425 GHz; third-harmonic power extraction; waveguide cavity; dielectric-filled conical horn; 40 muW; doping profile; waveguide transition; quasioptical absolute power meter; 45 muW; Gunn device; power measurement; InP; oscillator

Subjects: Waveguide and microwave transmission line components; Oscillators; Bulk effect devices; Solid-state microwave circuits and devices

References

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