Singlemode (SMSR>40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers
Singlemode (SMSR>40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers
- Author(s): H.P.D. Yang ; F.I. Lai ; Y.H. Chang ; H.C. Yu ; C.P. Sung ; H.C. Kuo ; S.C. Wang ; S.Y. Lin ; J.Y. Chi
- DOI: 10.1049/el:20058344
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- Author(s): H.P.D. Yang 1 ; F.I. Lai 2 ; Y.H. Chang 2 ; H.C. Yu 1 ; C.P. Sung 1 ; H.C. Kuo 2 ; S.C. Wang 2 ; S.Y. Lin 1 ; J.Y. Chi 1
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View affiliations
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Affiliations:
1: Nanophotonic Center, Industrial Technology Research Institute, Chutung, Taiwan, Republic of China
2: Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
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Affiliations:
1: Nanophotonic Center, Industrial Technology Research Institute, Chutung, Taiwan, Republic of China
- Source:
Volume 41, Issue 6,
17 March 2005,
p.
326 – 328
DOI: 10.1049/el:20058344 , Print ISSN 0013-5194, Online ISSN 1350-911X
A proton-implanted photonic crystal vertical-cavity surface-emitting laser for fibre optic applications is demonstrated. Ultra-low threshold current of about 1.25 mA, single fundamental mode (SMSR>40 dB) CW output power of over 1 mW, with a pulsed output power exceeding 2 mW has been achieved in the 850 nm range.
Inspec keywords: surface emitting lasers; ion implantation; laser modes; semiconductor lasers; optical communication equipment; photonic crystals
Other keywords:
Subjects: Optical communication devices, equipment and systems; Laser resonators and cavities; Laser beam modulation, pulsing and switching; mode locking and tuning; Photonic bandgap materials; Semiconductor doping; Lasing action in semiconductors; Laser beam modulation, pulsing and switching; mode locking and tuning; Design of specific laser systems; Optical communication equipment; Semiconductor lasers; Photonic band gap (condensed matter); Laser resonators and cavities; Doping and implantation of impurities
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