Driving scheme for stable operation of 2-TFT a-Si AMOLED pixel

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Driving scheme for stable operation of 2-TFT a-Si AMOLED pixel

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The amorphous silicon (a-Si) thin film transistor (TFT) backplane is becoming the technology of choice for active matrix organic light emitting diode (AMOLED) displays in view of its industrial accessibility and low fabrication cost over large area. However, the a-Si TFT suffers from threshold voltage (VT) shift. Presented is the simplest voltage-programmed pixel with an ability to compensate for the VT-shift in the drive TFT of the AMOLED pixel circuit. Simulation results also show that the pixel circuit can tolerate the spatial mismatch, temperature variation, and mechanical stress.

Inspec keywords: driver circuits; thin film transistors; silicon; LED displays; organic light emitting diodes; amorphous semiconductors; elemental semiconductors

Other keywords: amorphous silicon thin film transistor backplane; voltage-programmed pixel; Si; mechanical stress tolerance; driving scheme; threshold voltage shift; active matrix organic light emitting diode displays; stable operation; 2-TFT a-Si AMOLED pixel circuit; temperature variation tolerance; spatial mismatch tolerance

Subjects: Light emitting diodes; Display equipment and systems

References

    1. 1)
      • SpectreTM: Cadence Design Systems Inc.
    2. 2)
    3. 3)
    4. 4)
      • P. Servati , A. Nathan . Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors. J. Vac. Sci. Technol. , 1038 - 1042
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20058209
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