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Driving scheme for stable operation of 2-TFT a-Si AMOLED pixel

Driving scheme for stable operation of 2-TFT a-Si AMOLED pixel

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The amorphous silicon (a-Si) thin film transistor (TFT) backplane is becoming the technology of choice for active matrix organic light emitting diode (AMOLED) displays in view of its industrial accessibility and low fabrication cost over large area. However, the a-Si TFT suffers from threshold voltage (VT) shift. Presented is the simplest voltage-programmed pixel with an ability to compensate for the VT-shift in the drive TFT of the AMOLED pixel circuit. Simulation results also show that the pixel circuit can tolerate the spatial mismatch, temperature variation, and mechanical stress.

References

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      • P. Servati , A. Nathan . Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors. J. Vac. Sci. Technol. , 1038 - 1042
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      • SpectreTM: Cadence Design Systems Inc.
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