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An integrated quantum well infrared photodetector for ultra-high speed and frequency sensing in the mid-infrared has been developed. The photodetector is mounted on a microwave connector with either a ‘K’ or ‘V’ connector. The device was characterised at a temperature of 100 K by optical heterodyne generation of photocurrent in the frequency range DC to 75 GHz. Photoresponse at 75 GHz was approximately 30% that at DC, indicating very fast performance.
Inspec keywords: III-V semiconductors; photoconductivity; gallium arsenide; aluminium compounds; infrared detectors; photodetectors; semiconductor quantum wells; quantum well devices
Other keywords:
Subjects: Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection); Semiconductor superlattices, quantum wells and related structures; Photoconduction and photovoltaic effects; photodielectric effects; Photodetectors