Ultra-high frequency monolithically integrated quantum well infrared photodetector up to 75 GHz

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Ultra-high frequency monolithically integrated quantum well infrared photodetector up to 75 GHz

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An integrated quantum well infrared photodetector for ultra-high speed and frequency sensing in the mid-infrared has been developed. The photodetector is mounted on a microwave connector with either a ‘K’ or ‘V’ connector. The device was characterised at a temperature of 100 K by optical heterodyne generation of photocurrent in the frequency range DC to 75 GHz. Photoresponse at 75 GHz was approximately 30% that at DC, indicating very fast performance.

Inspec keywords: III-V semiconductors; photoconductivity; gallium arsenide; aluminium compounds; infrared detectors; photodetectors; semiconductor quantum wells; quantum well devices

Other keywords: GaAs-AlGaAs; monolithic integrated photodetector; optical heterodyne generation; ultra high frequency photodetector; 100 K; microwave connector; 75 GHz; photocurrent; GaAs; quantum well infrared photodetector

Subjects: Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection); Semiconductor superlattices, quantum wells and related structures; Photoconduction and photovoltaic effects; photodielectric effects; Photodetectors

References

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      • H.C. Liu . Quantum well intersubband heterodyne infrared detection up to 82 GHz. Appl. Phys. Lett. , 11 , 1594 - 1596
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