Demonstration of 4H-SiC UV single photon counting avalanche photodiode
Demonstration of 4H-SiC UV single photon counting avalanche photodiode
- Author(s): X. Xin ; F. Yan ; P. Alexandrove ; X. Sun ; C.M. Stahle ; J. Hu ; M. Matsumura ; X. Li ; M. Weiner ; H.J. Zhao
- DOI: 10.1049/el:20057320
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- Author(s): X. Xin 1 ; F. Yan 2 ; P. Alexandrove 3 ; X. Sun 4 ; C.M. Stahle 4 ; J. Hu 1 ; M. Matsumura 4 ; X. Li 3 ; M. Weiner 3 ; H.J. Zhao 1
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View affiliations
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Affiliations:
1: SiCLAB, Department of ECE, Rutgers University, Piscataway, USA
2: SiCLAB, Department of ECE, NASA/Raytheon, Greenbelt, USA
3: SiCLAB, Department of ECE, United Silicon Carbide, New Brunswick, USA
4: SiCLAB, Department of ECE, NASA-Goddard Space Flight Center, Greenbelt, USA
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Affiliations:
1: SiCLAB, Department of ECE, Rutgers University, Piscataway, USA
- Source:
Volume 41, Issue 4,
17 February 2005,
p.
212 – 214
DOI: 10.1049/el:20057320 , Print ISSN 0013-5194, Online ISSN 1350-911X
The first 4H-SiC UV single photon counting avalanche photodiode has been designed, fabricated and characterised. Spectral quantum efficiency from 250 to 370 nm is presented. Single photon counting at room temperature is demonstrated for the first time and counting efficiency is reported.
Inspec keywords: silicon compounds; avalanche photodiodes; sputter deposition; ultraviolet spectra; photon counting; wide band gap semiconductors; ultraviolet detectors; semiconductor growth; sputter etching
Other keywords:
Subjects: Sputter deposition; Photodetectors; Photoelectric devices; Plasma applications in manufacturing and materials processing; Thin film growth, structure, and epitaxy; Surface treatment and degradation in semiconductor technology; Deposition by sputtering; Surface treatment (semiconductor technology); Visible and ultraviolet spectra of other nonmetals
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