The first 4H-SiC UV single photon counting avalanche photodiode has been designed, fabricated and characterised. Spectral quantum efficiency from 250 to 370 nm is presented. Single photon counting at room temperature is demonstrated for the first time and counting efficiency is reported.
Inspec keywords: silicon compounds; avalanche photodiodes; sputter deposition; ultraviolet spectra; photon counting; wide band gap semiconductors; ultraviolet detectors; semiconductor growth; sputter etching
Other keywords:
Subjects: Sputter deposition; Photodetectors; Photoelectric devices; Plasma applications in manufacturing and materials processing; Thin film growth, structure, and epitaxy; Surface treatment and degradation in semiconductor technology; Deposition by sputtering; Surface treatment (semiconductor technology); Visible and ultraviolet spectra of other nonmetals
References
-
-
1)
- F. Yan , Y. Luo , J.H. Zhao , M. Bush , G.H. Olsen , M. Weiner . 4H-SiC APD with edge terminated by multi-step junction extension termination. Electron. Lett. , 1080 - 1081
-
2)
- S. Verghese , K.A. McIntosh , R.J. Molnar , L.J. Mahoney , R.L. Aggarwal , M.W. Geis , K.M. Molvar , E.K. Duerr , I. Melngailis . GaN avalanche photodiodes operating in linear-gain mode and Geiger mode. IEEE Trans. Electron Devices , 502 - 511
-
3)
- S. Cova , M. Ghioni , A. Lotito , I. Rech , F. Zappa . Evolution and prospects for single-photon avalanche photodiodes and uenching circuits. J. Mod. Opt. , 1267 - 1288
-
4)
- F. Yan , Y. Luo , J.H. Zhao , G.H. Olsen . 4H-SiC visible blind UV avalanche photodiode. Electron. Lett. , 929 - 90
-
5)
- K.A. McIntosh , J.P. Donnelly , D.C. Oakley , A. Naphleone , S.D. Calawa , L.J. Mahoney , K.M. Molvar , E.K. Duerr , S.H. Groves , D.C. Shaver . InGaAsP/InP avalanche photodiodes for photon counting at 1.06 µm. Appl. Phys. Lett. , 2505 - 2507
-
1)
Related content