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740 nm InP/GaInP quantum-dot laser with 190 A cm−2 room temperature threshold current density

740 nm InP/GaInP quantum-dot laser with 190 A cm−2 room temperature threshold current density

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InP quantum-dot lasers grown on GaAs substrates and emitting in the 730–740 nm band with threshold current density as low as 190 A cm−2 for a 2000 µm-long device with uncoated facets are reported.

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