Broadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as an active region. The devices exhibited properties of 110 nm bandwidth with the centre of 1.1 µm and above 30 mW output under pulse injection at room temperature.
Inspec keywords: gallium arsenide; superluminescent diodes; molecular beam epitaxial growth; indium compounds; semiconductor quantum dots; III-V semiconductors
Other keywords: 1.1 micron; 30 mW; molecular beam epitaxy; broadband superluminescent diodes; InAs-GaAs; quantum dot superluminescent diodes; self-assembled quantum dots
Subjects: Light emitting diodes; Vacuum deposition
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_20053822
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content/journals/10.1049/el_20053822
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