For access to this article, please select a purchase option:
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Your recommendation has been sent to your librarian.
A novel aspect of the carbon effect on indium electrical activation in silicon is presented. It is shown that, depending on the thermal budget used during annealing, the presence of carbon can increase or inhibit the indium electrical activation. The different behaviour is explained in terms of the Ins–Cs couple formation for low thermal budgets and carbon precipitation for high thermal budgets.
Inspec keywords: silicon; ion implantation; Hall effect; elemental semiconductors; annealing; indium; semiconductor doping; carbon
Other keywords:
Subjects: Annealing processes; Annealing processes in semiconductor technology; Galvanomagnetic and other magnetotransport effects (semiconductors/insulators); Semiconductor doping; Doping and implantation of impurities; Elemental semiconductors; Electrical conductivity of elemental semiconductors