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Dual carbon effect on electrical properties of high dose indium implants in silicon

Dual carbon effect on electrical properties of high dose indium implants in silicon

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A novel aspect of the carbon effect on indium electrical activation in silicon is presented. It is shown that, depending on the thermal budget used during annealing, the presence of carbon can increase or inhibit the indium electrical activation. The different behaviour is explained in terms of the Ins–Cs couple formation for low thermal budgets and carbon precipitation for high thermal budgets.

References

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      • The International Technology Roadmap for Semiconductors 2003, http://public.itrs.net/Files/2003ITRS/Home2003.htm.
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      • E.C. Jones , E. Ishida . Shallow junction doping technology for ULSI. Mat. Sci. Eng. , 1
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      • S. Gennaro . Indium clustering in a silicon matrix in the presence of carbon co-implantation. Nucl. Instrum. Methods Phys. Res. B
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      • Gennaro, S.: `Effects of carbon content and annealing conditions on the electrical activation of indium implanted silicon', Proc. 14th Int. Conf. on Ion Implantation Technology (IIT 2002), Taos, NM, USA, p. 552.
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      • Werner, P.: `TEM investigation of C-Si defects in carbon implanted silicon', Proc. Ion Implantation Technology, 1996, p. 675.
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