Measurement of modal gain in 1.1 µm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructures
Measurement of modal gain in 1.1 µm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructures
- Author(s): Z. Mi ; S. Fathpour ; P. Bhattacharya
- DOI: 10.1049/el:20053374
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- Author(s): Z. Mi 1 ; S. Fathpour 1 ; P. Bhattacharya 1
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View affiliations
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Affiliations:
1: Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, USA
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Affiliations:
1: Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, USA
- Source:
Volume 41, Issue 23,
10 November 2005,
p.
1282 – 1283
DOI: 10.1049/el:20053374 , Print ISSN 0013-5194, Online ISSN 1350-911X
Single-pass optical gain of self-assembled InGaAs/GaAs p-doped tunnel injection quantum dot laser heterostructures emitting at 1.1 µm is measured by the multisection device technique. The heterostructures, consisting of three layers of quantum dots in the active region, demonstrate net modal gain as high as 57 cm−1.
Inspec keywords: quantum dot lasers; gallium arsenide; III-V semiconductors; semiconductor quantum dots; self-assembly; indium compounds; multilayers; semiconductor heterojunctions
Other keywords:
Subjects: Semiconductor superlattices, quantum wells and related structures; Semiconductor lasers; Lasing action in semiconductors; Semiconductor junctions
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