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Experimental gallium nitride microwave Doherty amplifier

Experimental gallium nitride microwave Doherty amplifier

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The combination of gallium nitride (GaN) device technology with the now well established efficiency enhancing Doherty power amplifier (PA) architecture is presented for the first time. The experimental structure exhibits a power density of approximately 1 W/mm and linearity that remains comparable to that observed in other GaAs structures, demonstrating that GaN can be highly effective when used within this type of PA architecture.

http://iet.metastore.ingenta.com/content/journals/10.1049/el_20053155
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