The long-term stability of defects with the ageing of heavy-ion-irradiated and post-irradiated-annealed InGaAs/GaAs compound semiconductor quantum wells is reported using the time-resolved upconversion technique of luminescence lifetimes. The defects created by Ni+-heavy-ion irradiation are found to be thermally unstable. The ageing tests prove that a substantial amount of defects are removed by self-annealing in about a month of time even at room temperature through a slow diffusion process, resulting in a dynamically stable sample but with a twofold increment in lifetimes. If the sample is annealed upon Ni+ irradiation, the defects are removed immediately, yielding stable and much longer relaxation times independent of the ageing process. These results may be useful in designing devices with an active region as ion-irradiated semiconductor quantum wells.
References
-
-
1)
-
N.V. Tkachenko ,
L. Rantala ,
A.Y. Tauber ,
J. Helaja ,
P.H. Hynninen ,
H. Lemmityinen
.
Photoinduced electron transfer in phytochlorin-[60] Fullerene dyads.
J. Am. Chem. Soc.
,
9378 -
9387
-
2)
-
V.D.S. Dhaka ,
N.V. Tkachenko ,
E.-M. Pavelescu ,
H. Lemmetyinen ,
T. Hakkarainen ,
M. Guina ,
J. Konttinen ,
O. Okhotnikov ,
M. Pessa ,
K. Arstila ,
J. Keinonen
.
Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics.
New. J. Phys.
-
3)
-
O. Okhotnikov ,
A. Grudinin ,
M. Pessa
.
Ultra-fast fiber laser systems based on SESAM technology: new horizons and applications.
New. J. Phys.
-
4)
-
J. Singh
.
(1995)
Semiconductor optoelectronic: physics and technology.
-
5)
-
L. Joulaud ,
J. Manageney ,
J.-M. Lourtioz ,
P. Crozat ,
G. Patriarche
.
Thermal stability of ion-irradiated InGaAs with (sub-)picosecond carrier lifetimes.
Appl. Phys. Lett.
,
856 -
858
-
6)
-
J. Mangeney ,
H. Choumane ,
G. Patriarche ,
G. Leroux ,
G. Aubin ,
J.C. Harmand ,
J.L. Oudar ,
H. Bernas
.
Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers.
Appl. Phys. Lett.
,
2722 -
2724
-
7)
-
J. Mangeney ,
N. Stelmakh ,
F. Aniel ,
P. Boucaud ,
J.-M. Lourtioz
.
Temperature dependence of the absorption saturation relaxation time in light- and heavy-ion-irradiated bulk GaAs.
Appl. Phys. Lett.
,
4711 -
4713
-
8)
-
J. Mangeney ,
J. Lopez ,
N. Stelmakh ,
J.-M. Lourtioz ,
J.L. Oudar ,
H. Bernas
.
Subgap optical absorption and recombination center efficiency in bulk GaAs irradiated by light or heavy ions.
Appl. Phys. Lett.
,
40 -
42
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20053117
Related content
content/journals/10.1049/el_20053117
pub_keyword,iet_inspecKeyword,pub_concept
6
6