Suppressing phosphorus diffusion in germanium by carbon incorporation

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Suppressing phosphorus diffusion in germanium by carbon incorporation

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A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.

Inspec keywords: carbon; elemental semiconductors; p-n junctions; germanium; annealing; phosphorus; semiconductor doping; MOSFET

Other keywords: Ge MOSFET process; Ge:P; phosphorus diffusion suppression; annealing; carbon incorporation

Subjects: Insulated gate field effect transistors; Annealing processes in semiconductor technology; Semiconductor doping; Elemental semiconductors; Semiconductor junctions

References

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      • A. Nayfeh , C.O. Chu , K. Yonehara , K.C. Saraswat . Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si. IEEE Trans. Electron Device Lett. , 311 - 313
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      • A. Ritenour , S. Yu , M.L. Lee , N. Lu , W. Bai , A. Pitera , E.A. Fitzgerald , D.L. Kwong , D.A. Antoniadis . Epitaxial strained germanium p-MOSFET's with HfO2 gate dielectric and TaN gate electrode. IEDM Tech. Dig. , 18.2.1 - 18.2.4
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