A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.
References
-
-
1)
-
G.L. Luo ,
T.H. Yang ,
E.Y. Chang ,
C.Y. Chang ,
K.A. Chao
.
Growth of high-quality Ge epitaxial layers on Si (100).
Jpn. J. Appl. Phys.
,
L517 -
L519
-
2)
-
P.A. Stolk ,
H.J. Gossmann ,
D.J. Eaglesham ,
J.M. Poate
.
The effect of carbon on diffusion in silicon.
Mater. Sci. Eng.
,
275 -
281
-
3)
-
A. Nayfeh ,
C.O. Chu ,
K. Yonehara ,
K.C. Saraswat
.
Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si.
IEEE Trans. Electron Device Lett.
,
311 -
313
-
4)
-
S. Uppal ,
A.F.W. Willoughby ,
J.M. Bonar ,
A.G.R. Evans ,
N.E.W. Cowern ,
R. Morris ,
M.G. Dowsett
.
Diffusion of ion-implanted boron in germanium.
J. Appl. Phys.
,
4293 -
4295
-
5)
-
S.M. Sze
.
(1981)
Physics of semiconductor devices.
-
6)
-
A. Ritenour ,
S. Yu ,
M.L. Lee ,
N. Lu ,
W. Bai ,
A. Pitera ,
E.A. Fitzgerald ,
D.L. Kwong ,
D.A. Antoniadis
.
Epitaxial strained germanium p-MOSFET's with HfO2 gate dielectric and TaN gate electrode.
IEDM Tech. Dig.
,
18.2.1 -
18.2.4
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20052999
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