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A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.
Inspec keywords: carbon; elemental semiconductors; p-n junctions; germanium; annealing; phosphorus; semiconductor doping; MOSFET
Other keywords:
Subjects: Insulated gate field effect transistors; Annealing processes in semiconductor technology; Semiconductor doping; Elemental semiconductors; Semiconductor junctions