Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation

Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation

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Temperature dependent experimental results of Schottky-barrier MOSFETs with dopant segregation using fully nickel silicided source and drain contacts are presented. The dependence of the extracted effective Schottky-barrier height (SBH) on the gate voltage clearly shows that use of dopant segregation lowers the effective SBH for electron injection significantly from 0.64 eV down to ∼0.1 eV.


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