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Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation

Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation

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Temperature dependent experimental results of Schottky-barrier MOSFETs with dopant segregation using fully nickel silicided source and drain contacts are presented. The dependence of the extracted effective Schottky-barrier height (SBH) on the gate voltage clearly shows that use of dopant segregation lowers the effective SBH for electron injection significantly from 0.64 eV down to ∼0.1 eV.

References

    1. 1)
      • J. Kedzierski , P. Xuan , E.H. Anderson , J. Bokor . Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime. Int. Electron Devices Meet., Tech. Dig. , 57 - 60
    2. 2)
    3. 3)
      • M.Q. Huda , K. Sakamoto . Use of ErSi2 in source/drain contacts of ultra-thin SOI MOSFETs. Mater. Sci. Eng. , 378 - 381
    4. 4)
    5. 5)
      • Zhang, M., Knoch, J., Zhao, Q.T., Lenk, St., Appenzeller, J., Breuer, U., Mantl, S.: `Dopant segregation in Schottky barrier SOI-MOSFETs', Proc. 6th Int. Conf. on Ultimate Integration of Silicon, 2005, p. 23–26.
    6. 6)
    7. 7)
    8. 8)
    9. 9)
      • J. Appenzeller , M. Radosavljevic , J. Knoch , P. Avouris . Tunneling versus thermionic emission in one-dimensional semiconductors. Phys. Rev. Lett. , 048301/1 - 4.
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