All-optical NAND gate using cross-gain modulation in semiconductor optical amplifiers

Access Full Text

All-optical NAND gate using cross-gain modulation in semiconductor optical amplifiers

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

By using gain nonlinearity characteristics of a semiconductor optical amplifier, an all-optical NAND gate at 10 Gbit/s is demonstrated. The all-optical NAND gate operates in single mechanism, which is cross-gain modulation. In the NAND gate (AB̄+Ā), Boolean AB̄ is obtained by using signal A as a probe beam and signal B as a pump beam in SOA-1. Also, Boolean Ā is obtained by using the clock signal as a probe beam and signal A as a pump beam in SOA-2. By adding the two outputs from SOA-1 and SOA-2, Boolean Ā+AB̄ (logic NAND) can be acquired. The extinction ratio is about 6.1 dB.

Inspec keywords: optical logic; logic gates; semiconductor optical amplifiers; optical modulation; NAND circuits

Other keywords: 10 Gbit/s; gain nonlinearity characteristics; all-optical NAND gate; semiconductor optical amplifiers; pump beam; clock signal; logic NAND; probe beam; cross-gain modulation

Subjects: Optical logic elements; Laser beam modulation, pulsing and switching; mode locking and tuning; Semiconductor lasers; Optical logic devices and optical computing techniques; Logic circuits; Logic and switching circuits

References

    1. 1)
      • T. Akiyama . Pattern-effect-free semiconductor optical amplifier achieved using quantum dots. Electron. Lett. , 1139 - 1140
    2. 2)
      • A.D. Ellies . Error free 100 Gbit/s wavelength conversion using grating assisted cross-gain modulation in 2 mm long semiconductor optical amplifier. Electron. Lett. , 1958 - 1959
    3. 3)
      • J.H. Kim . All-optical XOR gate using semiconductor optical amplifiers without additional input beam. IEEE Photonics Technol. Lett. , 1436 - 1438
    4. 4)
      • K.E. Stubkjaer . Semiconductor optical amplifier-based all-optical gates for high-speed optical processing. IEEE J. Sel. Top. Quantum Electron. , 1428 - 1435
    5. 5)
      • J.H. Kim . All-optical AND gate using cross-gain modulation in semiconductor optical amplifiers. Jpn. J. Appl. Phys. , 608 - 610
    6. 6)
      • T. Durhuus . All-optical wavelength conversion by semiconductor optical amplifiers. J. Lightwave Technol. , 942 - 954
    7. 7)
      • K.L. Hall . 100-Gbits bitwise logic. Opt. Lett. , 1271 - 1273
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20052320
Loading

Related content

content/journals/10.1049/el_20052320
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading