Low-jitter 10 GHz multiphase PLL in 90 nm CMOS

Access Full Text

Low-jitter 10 GHz multiphase PLL in 90 nm CMOS

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

A 10 GHz multiphase phase-locked loop (PLL) implemented in 90 nm bulk CMOS technology is presented that uses a bootstrapped NMOS inverter oscillator to obtain steeper clock edges, which may yield an improved jitter performance. The measured values for the rms and peak-to-peak jitter are better than 1 and 7 ps, respectively.

Inspec keywords: phase locked loops; bootstrap circuits; CMOS integrated circuits; microwave integrated circuits; voltage-controlled oscillators; jitter

Other keywords: multiphase PLL; peak-to-peak jitter; voltage-controlled oscillators; CMOS integrated circuits; bootstrap circuits; 10 GHz; bootstrapped NMOS inverter oscillator; invertor oscillators; RMS jitter; microwave integrated circuits; 90 nm; phase locked loops

Subjects: CMOS integrated circuits; Microwave integrated circuits; Oscillators; Modulators, demodulators, discriminators and mixers

References

    1. 1)
      • R. Baker , H. Li , D. Boyce . (1998) CMOS circuit design, layout, and simulation.
    2. 2)
      • Maneatis, J.: `Low-jitter and process-independent DLL and PLL based on self-biased techniques', ISSCC Dig. Tech. Pprs, February 1996, p. 130–131.
    3. 3)
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20052306
Loading

Related content

content/journals/10.1049/el_20052306
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading