Sb-based HEMTs with InAlSb/InAs heterojunction
Antimonide-based HEMTs with a 0.35 µm gate length have been fabricated with an InAlSb/InAs heterojunction. The new Te-doped MBE material, which does not contain highly-reactive AlSb, exhibits a Hall mobility of 23,500 cm2/V-s and a sheet density of 1.7×1012 cm−2. The devices have a DC transconductance of 1000 mS/mm and an fTLg product of 32 GHz-µm at VDS=0.35 V.