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Sb-based HEMTs with InAlSb/InAs heterojunction

Sb-based HEMTs with InAlSb/InAs heterojunction

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Antimonide-based HEMTs with a 0.35 µm gate length have been fabricated with an InAlSb/InAs heterojunction. The new Te-doped MBE material, which does not contain highly-reactive AlSb, exhibits a Hall mobility of 23,500 cm2/V-s and a sheet density of 1.7×1012 cm−2. The devices have a DC transconductance of 1000 mS/mm and an fTLg product of 32 GHz-µm at VDS=0.35 V.

References

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      • Tsai, R., Barsky, M., Boos, J.B., Bennett, B.R., Lee, J., Papanicolaou, N.A., Magno, R., Namba, C., Liu, P.H., Park, D., Grundbacher, R., Gutierrez, A.: `Metamorphic AlSb/AlSb HEMT for low-power, high-speed electronics', GaAs Integrated Circuit Symp. Tech. Dig., 2003, p. 294–297.
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