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Reliable 2-bit/cell NVM technology using twin SONOS memory transistor

Reliable 2-bit/cell NVM technology using twin SONOS memory transistor

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The twin SONOS memory (TSM) transistors for 2-bit/cell non-volatile-memory (NVM) application are presented and their reliability is evaluated so that they can be applied to next generation NVM technology. This new memory, which is implemented by the damascene gate and outer sidewall spacer processes, shows a high reliability down to 80 nm gate length.


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      • Fukuda, M., Nakanishi, T., Nara, Y.: `Scaled 2 bit/cell SONOS type nonvolatile memory technology for sub-90 nm embedded application using SiN sidewall trapping structure', Tech. Dig. Int. Electron Devices Mtg, December 2003, Washington, DC, USA, p. 909–912.
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      • Y.K. Lee , K.W. Song , J.W. Hyun , J.D. Lee , B.-G. Park , S.T. Kang , J.D. Choe , S.Y. Han , J.N. Han , S.W. Lee , O.I. Kwon , C. Chung , D. Park , K. Kim . Twin SONOS memory with 30-nm storage nodes under a merged gate fabricated with inverted sidewall and damascene process. IEEE Electron Device Lett. , 5 , 317 - 319

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