Your browser does not support JavaScript!

Stable 20 W/mm AlGaN-GaN MOSHFET

Stable 20 W/mm AlGaN-GaN MOSHFET

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The first stable operation (>100 h) of a AlGaN/GaN metal-oxide semiconductor heterostructure field effect transistor (MOSHFET) at very high RF power levels (∼20 W/mm at 2 GHz and 55 V drain bias) is reported. These record values are attributed to a current collapse-free performance resulting from using a field-plate over a leaky dielectric, and to the low forward gate currents owing to the MOS-design.


    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
      • M. Asif Khan . AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistor. IEEE Electron Device Lett. , 63 - 65
    8. 8)
    9. 9)
    10. 10)
    11. 11)
      • M. Asif Khan . Insulating gate III-N heterostructure field-effect transistors for high power microwave and switching applications. IEEE Trans. Microw. Theory Tech. , 624 - 633

Related content

This is a required field
Please enter a valid email address