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Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structures

Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structures

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Laterally coupled, complex distributed feedback lasers based on AlInGaAs/InAs/InP quantum dash layers were fabricated by maskless focused ion beam lithography. Continuous-wave powers above 30 mW at room temperature, sidemode suppression ratios of 44 dB and a modulation bandwidth of 7.6 GHz were demonstrated.

References

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      • On the nature of quantum dash structures
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      • Highly resolved maskless patterning on InP by focused ion beam enhanced wet chemical etching
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_20051160
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